irg5k50p5k50pm06e IRG5K100PM06F 1 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 module absolute maximum ratings v ces collector to emitter voltage (inverter igbt) 600 v i c continuous collector current (inverter igbt) t c = 80c 100 a t c = 25c 170 a t jop maximum operating junction temperature range - 40 to +150 c t stg storage temperature - 40 to +125 c v iso isolation voltage (all terminals shorted), f = 50hz, 1minute 2500 v m mounting screw: m6 6.0 nm g typical weight 300 g base part number package type standard pack quantity orderable part number IRG5K100PM06F pow ir eco 3 ? box 40 IRG5K100PM06F features benefits low v ce(on) and switching losses high efficiency in a wide range of applications 100% rbsoa tested rugged transient performance 10sec short circuit safe operating area pow ir eco 3 ? package industry standard lead free rohs compliant, environmental friendly applications ? industrial motor drive ? servo drive ? traction inverter converter, inverter, brake (cib) module pow ir eco 3 ? package v ces = 600v i c = 100a at t c = 80c t sc 10sec v ce(on) = 1.80v at i c = 100a downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 2 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 switching characteristics of inverter igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 175 ns t j = 25c v cc =300v, i c = 100a, r g = 15?, v ge =15v, inductive load 175 t j = 125c t r rise time 130 ns t j = 25c 125 t j = 125c t d(off) turn - off delay time 435 ns t j = 25c 445 t j = 125c t f fall time 125 ns t j = 25c 130 t j = 125c e on turn - on switching loss 1.3 mj t j = 25c 1.7 t j = 125c e off turn - off switching loss 2.4 mj t j = 25c 2.9 t j = 125c q g total gate charge 535 nc t j = 25c absolute maximum ratings of inverter igbt v ces collector to emitter voltage 600 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 100 a t c = 25c 170 a i cm pulse collector current t j = 150c 200 a p d maximum power dissipation t c = 25c, t j = 150c 405 w electrical characteristics of inverter igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 600 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 3.5 4.5 5.5 v i c = 0.25ma, v ce = v ge v ce(on) collector to emitter saturation voltage 1.80 2.10 v t j = 25c i c = 100a, v ge = 15v 2.00 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0v downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 3 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 switching characteristics of inverter igbt (contd) parameter min. typ. max. unit test conditions c ies input capacitance 6.2 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.56 c res reverse transfer capacitance 0.22 rbsoa reverse bias safe operating area trapezoid i c = 200a,v cc = 480v, v p =600v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 300v, v ge = 15v, t j = 150c absolute maximum ratings of inverter freewheeling diode v rrm repetitive peak reverse voltage 600 v i f diode continuous forward current, t c = 25c 200 a diode continuous forward current, t c = 80c 100 i fm pulse diode current 200 a electrical and switching characteristics of freewheeling diode parameter typ. unit test conditions max. v f forward voltage 1.50 v t j = 25c i f = 100a , v ge = 0v 1.80 1.50 t j = 125c i rr peak reverse recovery current 30 a t j = 25c i f 100 a, di/dt=820a/ s, v rr = 300v, v ge = - 15v 45 t j = 125c q rr reverse recovery charge 1.4 c t j = 25c 3.5 t j = 125c e rec reverse recovery energy 0.14 mj t j = 25c 0.69 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 4 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 absolute maximum ratings of rectifier bridge diode v rrm repetitive peak reverse voltage, t c = 25c 1200 v i frmsm maximum rms forward current per chip, t j = 80c 100 a i rmsm maximum rms current at rectifier output, t j = 80c 100 a i fsm surge current at tp = 10ms, t j = 25c 800 a surge current at tp = 10ms, t j = 150c 600 i 2 t i 2 t value for fusing, t j = 25c 2760 a 2 s i 2 t value for fusing, t j = 150c 1750 absolute maximum ratings of brake - chopper igbt v ces collector to emitter voltage 600 v v ges continuous gate to emitter voltage 20 v i c continuous collector current t c = 80c 50 a t c = 25c 100 a i cm pulse collector current t j = 150c 100 a p d maximum power dissipation t c = 25c, t j = 150c 245 w t j maximum igbt junction temperature 150 c t jop maximum operating junction temperature range - 40 to +150 c electrical characteristics of brake - chopper igbt at t j = 25 c (unless otherwise specified) parameter min. typ. max. unit test conditions v (br)ces collector to emitter breakdown voltage 600 v v ge = 0v, i c = 1ma v ge(th) gate threshold voltage 3.5 4.5 5.5 v i c = 0.25ma, v ce = v ge v ce(on) collector to emitter saturation voltage (module level) 1.80 2.10 v t j = 25c i c = 50a, v ge = 15v 2.00 v t j = 125c i ces collector to emitter leakage current 1 ma v ge = 0v, v ce = v ces i ges gate to emitter leakage current 400 na v ge = 20v, v ce = 0v electrical characteristics of rectifier bridge diode parameter typ. max. unit test conditions v f forward voltage 1.15 1.30 v t j = 25c i f = 100a 1.10 t j = 150c i r reverse current 1 ma t j = 25c v r = v rrm downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 5 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 switching characteristics of brake - chopper igbt parameter min. typ. max. unit test conditions t d(on) turn - on delay time 110 ns t j = 25c v cc =300v, i c = 50a, r g = 30?, v ge =15v, inductive load 100 t j = 125c t r rise time 75 ns t j = 25c 80 t j = 125c t d(off) turn - off delay time 220 ns t j = 25c 240 t j = 125c t f fall time 90 ns t j = 25c 110 t j = 125c e on turn - on switching loss 0.68 mj t j = 25c 0.78 t j = 125c e off turn - off switching loss 0.75 mj t j = 25c 0.92 t j = 125c q g total gate charge 260 nc t j = 25c c ies input capacitance 3.0 nf v ce = 25v, v ge = 0v, f 1mhz, t j = 25c c oes output capacitance 0.35 c res reverse transfer capacitance 0.14 rbsoa reverse bias safe operating area trapezoid i c = 100a,v cc = 480v, v p =600v, r g = 15?, v ge = +15v to 0v, t j = 150c scsoa short circuit safe operating area 10 s v cc = 300v, v ge = 15v, t j = 150c absolute maximum ratings of brake - chopper diode v rrm repetitive peak reverse voltage 600 v i f diode continuous forward current, t c = 25c 100 a diode continuous forward current, t c = 80c 50 i fm pulse diode current 100 a downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 6 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 ntc - thermistor characteristics typ. max. unit parameter r 25 t c =25c 5 k? ? r/r t c =100c r 100 =481? 5 % p 25 t c =25c 50 mw b 25/50 r 2 =r 25 exp[b 25/50 (1/t 2 - 1/(298.15k))] 3380 k b 25/80 r 2 =r 25 exp[b 25/80 (1/t 2 - 1/(298.15k))] 3440 k module thermal resistance characteristics parameter typ. unit r jc junction - to - case (inverter igbt) 0.31 c/w junction - to - case (freewheeling diode) 1.06 c/w junction - to - case (rectifier bridge diode) 0.45 c/w junction - to - case (brake - chopper igbt) 0.52 c/w junction - to - case (brake - chopper diode) 1.41 c/w r cs case - to - sink (conductive grease applied) 0.1 c/w electrical and switching characteristics of brake - chopper diode parameter typ. unit test conditions max. v f forward voltage 1.40 v t j = 25c i f = 50a , v ge = 0v 1.70 1.40 t j = 125c i rr peak reverse recovery current 30 a t j = 25c i f 50 a, di/dt=840a/ s, v rr = 600v, v ge = - 15v 40 t j = 125c q rr reverse recovery charge 2.40 c t j = 25c 3.60 t j = 125c e rec reverse recovery energy 0.25 mj t j = 25c 0.70 t j = 125c downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 7 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.1 typical saturation characteristics, inverter igbt fig.3 typical forward characteristics, freewheeling diode fig.2 typical output characteristics, inverter igbt fig.4 typical capacitance characteristics, inverter igbt fig.5 typical switching loss vs. collector current, inverter igbt fig.6 typical switching loss vs. gate resistance, inverter igbt 0 20 40 60 80 100 120 140 160 180 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ge =15v t j =125 c t j =25 c v ce (v) i c (a) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 t j =125 c v ge =17v v ge =15v v ge =13v v ge =11v v ge =9v v ce (v) i c (a) 0 20 40 60 80 100 120 140 160 180 200 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v ge =0v t j =125c t j =25c v f (v) i f (a) 0 5 10 15 20 25 0 2 4 6 8 10 12 v ce = 0 v,f=1mhz c ies c oes c (nf) v ce (v) 0 20 40 60 80 100 120 140 160 180 200 0 1 2 3 4 5 6 7 8 9 v cc =300v,v ge =+/-15v, rg =15 ohm,t j =125 c e off e on e rec e (mj) i c (a) 0 5 10 15 20 25 30 35 40 45 50 0 1 2 3 4 5 6 v cc = 300v , v ge = +/-15v , i c = 100a , t j = 125 c e off e on e rec e (mj) rg ( ? ) downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 8 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.7 typical load current vs. frequency, inverter igbt fig.8 reverse bias safe operation area (rbsoa), inverter igbt fig.9 typical transient thermal impedance, inverter igbt fig.10 typical transient thermal impedance, freewheeling diode fig.11 typical saturation characteristics, brake - chopper igbt fig.12 typical forward characteristics, brake - chopper diode square wave: diode as specified v cc i 0 20 40 60 80 100 120 140 1 10 100 duty cycle:50% t j =125c t c =80c rg=15 ohm,v ge =15v frequency (khz) load current (a) 0 100 200 300 400 500 600 0 50 100 150 200 i c (a) v ces (v) module chip 0.001 0.01 0.1 1 2 0.0 0.1 0.2 0.3 0.4 z th jc ( k/w ) t ( s ) z th jc :igbt 0.001 0.01 0.1 1 2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 z th jc ( k/w ) t ( s ) z th jc :diode 0 10 20 30 40 50 60 70 80 90 100 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 v ge =15v t j =125 c t j =25 c v ce (v) i c (a) 0 10 20 30 40 50 60 70 80 90 100 0.0 0.3 0.6 0.9 1.2 1.5 1.8 v f (v) i f (a) v ge =0v t j =125c t j =25c downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 9 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 fig.13 typical forward characteristics, rectifier bridge diode fig. 14 ntc temperature characteristics 0 10 20 30 40 50 60 70 80 90 100 110 120 0 2 4 6 8 10 12 14 16 18 20 r ( k ohm ) t c (c) rtyp 20 40 60 80 100 120 140 160 180 200 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v f (v) i f (a) t j =25 t j =150 downloaded from: http:///
irg5k50p5k50pm06e IRG5K100PM06F 10 www.irf.com ? 2014 international rectifier submit datasheet feedback september 2, 2014 internal circuit: package outline (unit: mm): qualification information ? qualification level industrial moisture sensitivity level not applicable rohs compliant yes ? qualification standards can be found at international rectifie rs web site: http://www.irf.com/product - info/reliability/ ir world headquarters: 101 north sepulveda blvd, el segundo, california, 90245, usa to contact international rectifier, please visit: http://www.irf.com/whoto - call/ downloaded from: http:///
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